Band structure of strained Gd(0001) films

Band structure of strained Gd(0001) films

Unoccupied band structure of strained gadolinium

The Spin Polarized Band Structure of Strained Thin Films of Gadolinium

The magnetic properties of strained thin films of gadolinium are characterized by a wave vector and thickness dependence of the exchange splitting. The spin-resolved band structure has been mapped by spin polarized photoemission, and provides considerable insight into the relationship between magnetism of local moment systems, and band structure. For more than 30 years theorists [l] have predic...

VALENCE BAND STRUCTURE OF STRAINED-LAYER Si-Si0.5Ge0.5 SUPERLATTICES

We calculate the valence subband dispersion of Sio,5Ge,,5 Si strained layer structures grown on a Si (001) substrate and on a Si0,,5Ge0,25 buffer. We use the 6x6 Luttinger-Kohn Hamiltonian, including the effects both of strain and of the split-off band. The heavy-hole zone centre states are separated by over 60meV from the light-hole states and the highest valence subband has a low zone-centre ...

Band Structure Calculations of Strained Semiconductors Using Empirical Pseudopotential Theory

BAND STRUCTURE CALCULATIONS OF STRAINED SEMICONDUCTORS USING EMPIRICAL PSEUDOPOTENTIAL THEORY FEBRUARY 2011 JISEOK KIM B.S., KYUNGHEE UNIVERSITY SEOUL M.S., BALL STATE UNIVERSITY MUNCIE Ph.D., UNIVERSITY OF MASSACHUSETTS AMHERST Directed by: Professor Massimo V. Fischetti Electronic band structure of various crystal orientations of relaxed and strained bulk, 1D and 2D confined semiconductors ar...